1997. 6. 24
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTA1267L
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
LOW NOISE AMPLIFIER APPLICATION.
FEATURES
Excellent h
FE
Linearity
: h
FE
(0.1mA)/h
FE
(2mA)=0.95(Typ.).
Low Noise : NF=0.2dB(Typ.), 3dB(Max.).
Complementary to KTC3199L.
MAXIMUM RATING (Ta=25 )
1
2
3
TO-92M
DIM MILLIMETERS
A
B
C
D
E
F
G
H
J
K
1. EMITTER
2. COLLECTOR
3. BASE
3.20 MAX
4.30 MAX
0.55 MAX
2.40 0.15
1.27
2.30
14.00 0.50
0.60 MAX
1.05
1.45
25
0.55 MAX
L
M
N
F
A
G
J
K
D
E
E
L
N
M
C
H
0.80
O
0.75
O
B
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification O:70 140, Y:120 240, GR:200 400
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-50
V
Collector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-150
mA
Emitter Current
I
E
150
mA
Collector Power Dissipation
P
C
400
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-50V, I
E
=0
-
-
-0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-0.1
A
DC Current Gain
h
FE
(Note)
V
CE
=-6V, I
C
=-2mA
70
-
400
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-100mA, I
B
=-10mA
-
-0.1
-0.3
V
Transition Frequency
f
T
V
CE
=-10V, I
C
=-1mA
80
-
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
4.0
7.0
pF
Noise Figure
NF(1)
V
CE
=-6V, I
C
=-0.1mA, f=100Hz, Rg=10k
-
0.5
6.0
dB
NF(2)
V
CE
=-6V, I
C
=-0.1mA, f=1kHz, Rg=10k
-
0.2
3.0
1997. 6. 24
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KTA1267L
Revision No : 1
COLLECTOR POWER
0
C
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
f - I
E
EMITTER CURRENT I (mA)
0.1
T
TRANSITION FREQUENCY f (MHz)
COLLECTOR CURRENT I (mA)
COLLECTOR-EMITTER VOLTAGE V (V)
C
0
CE
0
I - V
C
CE
-1
-2
-3
-4
-5
-6
-7
-8
-40
-80
-120
-160
-200
-240
-280
COMMON EMITTER
Ta=25 C
-2.0
-1.5
-1.0
-0.5
I =-0.2mA
0
B
BASE-EMITTER VOLTAGE V (V)
BASE CURRENT I (
A)
0
-0.3
B
BE
I - V
B
BE
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-0.5
-1
-3
-5
-10
-30
-50
-100
-300
-500
-1k
V =-6V
CE
Ta=100 C
Ta=25 C Ta=-2
5
C
T
E
0.3
1
3
10
30
100
300
10
30
50
100
300
500
1k
COMMON EMITTER
V =-10V
Ta=25 C
CE
C
COLLECTOR CURRENT I (mA)
BASE-EMITTER SATURATION
V - I
-0.1
BE(sat)
-0.1
-30
C
COLLECTOR CURRENT I (mA)
V - I
CE(sat)
C
-0.1
-0.3
-0.5
-0.03
-0.03
-0.1
SATURATION VOLTAGE
CE(sat)
-0.01
-0.3
-1
-3
-10
-300
-100
COLLECTOR-EMITTER
V (V)
COMMON EMITTER
I /I =10
C B
Ta=100
C
Ta=25 C
Ta=-25 C
BE(sat)
C
VOLTAGE V (V)
-0.3
-1
-3
-10
-30
-100
-300
-0.3
-0.5
-1
-3
-5
-10
COMMON EMITTER
I /I =10
Ta=25 C
C B
DISSIPATION P (mW)
50
100
150
200
100
200
300
400
500
30
DC CURRENT GAIN h
FE
1k
-300
-100
-0.3
-0.1
COLLECTOR CURRENT I (mA)
C
h - I
FE
C
-1
-3
-10
-30
50
100
300
500
10
COMMON
Ta=100 C
Ta=25 C
Ta=-25 C
V =-6V
CE
CE
V =-1V
EMITTER
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